High electron mobility transistors (HEMTs) have been shown to be high performance millimeter wave devices due to their high-power gain and low noise figures. From theoretical points of view presented the noise behavior of HEMT. This work designs an analytical noise model of an AlInN/GaN modulation doped High Electron Mobility Transistor (HEMT). The method used in the noise of high-frequency analysis is designated and the different approximations commonly used in the derivation of the noise parameter expressions are discussed. The developed noise model explains the performance of noise in both thermal noise and flicker noise. The measurement techniques providing the noise figure and the other noise parameters are then described and compared. Small signal parameters are obtained and used to calculate the device’s Noise Figure (NF) simulate by using MATLAB software.

Keywords : Flicker Noise., Thermal Noise, Indium Nitride, HEMT, Noise Figure.